| Part Numbers | Manufacturer Name | Datasheet | Format - Memory | Memory Type | Memory Size | Speed | Interface | Voltage - Supply | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
| MR2A16ACYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (256K x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 44-TSOP (0.400", 10.16mm Width) | |
| MR2A08ACYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 44-TSOP (0.400", 10.16mm Width) | |
| MR2A16ACMA35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (256K x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 48-LFBGA | |
| MR256A08BSO35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 35ns | Parallel | 3 V ~ 3.6 V | 0?C ~ 70?C | 32-SOIC (0.295", 7.50mm Width) | |
| MR0A08BCSO35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 1M (128K x 8) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 32-SOIC (0.295", 7.50mm Width) | |
| MR4A16BYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 16M (1M x 16) | 35ns | Parallel | 3 V ~ 36 V | 0?C ~ 70?C | 54-TSOP (0.400", 10.16mm Width) | |
| MR4A16BCYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 16M (1M x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 54-TSOP (0.400", 10.16mm Width) | |
| MR25H256CDC | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 8-TDFN Exposed Pad | |
| MR25H256CDF | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 8-VDFN Exposed Pad | |
| MR256A08BYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 35ns | Parallel | 3 V ~ 3.6 V | 0?C ~ 70?C | 44-TSOP (0.400", 10.16mm Width) |
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