Part Numbers | Manufacturer Name | Datasheet | Amplifier Type | Number of Circuits | Output Type | Slew Rate | Gain Bandwidth Product | -3db Bandwidth | Current - Input Bias | Voltage - Input Offset | Current - Supply | Current - Output / Channel | Voltage - Supply, Single/Dual (±) | Operating Temperature | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NJM13700D | NEW JAPAN RADIO CO LTD | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | ?18V | -40?C ~ 85?C | Through Hole | 16-DIP (0.300", 7.62mm) | |
NJM13600D | NEW JAPAN RADIO CO LTD | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | ?18V | -40?C ~ 85?C | Through Hole | 16-DIP (0.300", 7.62mm) | |
NJM13600M | NEW JAPAN RADIO CO LTD | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | ?18V | -40?C ~ 85?C | Surface Mount | 16-SOIC (0.209", 5.30mm Width) | |
NJM13700M | NEW JAPAN RADIO CO LTD | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | ?18V | -40?C ~ 85?C | Surface Mount | 16-SOIC (0.209", 5.30mm Width) | |
NE5517DG | ON SEMICONDUCTOR | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | 4 V ~ 44 V, ?2 V ~ 22 V | 0?C ~ 70?C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | |
NE5517DR2G | ON SEMICONDUCTOR | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | 4 V ~ 44 V, ?2 V ~ 22 V | 0?C ~ 70?C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | |
CA3080E | INTERSIL CORP | Transconductance | 1 | Push-Pull | 75 V/?s | 2MHz | - | 2?A | 400?V | 1mA | 650?A | ?2 V ~ 15 V | 0?C ~ 70?C | Through Hole | 8-DIP (0.300", 7.62mm) | |
AU5517DR2G | ON SEMICONDUCTOR | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | 4 V ~ 44 V, ?2 V ~ 22 V | -40?C ~ 125?C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | |
NE5517AN | ON SEMICONDUCTOR | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | 4 V ~ 44 V, ?2 V ~ 22 V | 0?C ~ 70?C | Through Hole | 16-DIP (0.300", 7.62mm) | |
NE5517ANG | ON SEMICONDUCTOR | Transconductance | 2 | Push-Pull | 50 V/?s | 2MHz | - | 400nA | 400?V | 2.6mA | 650?A | 4 V ~ 44 V, ?2 V ~ 22 V | 0?C ~ 70?C | Through Hole | 16-DIP (0.300", 7.62mm) |