| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPS1101D | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100DR | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100DRG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1101DR | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1101DRG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100DG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1101DG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100D | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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