Manufacture :TEXAS INSTRUMENTS INC
11.25nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPS1101PWR TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.18A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 710mW Surface Mount 16-TSSOP (0.173", 4.40mm Width)
TPS1101D TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.3A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 791mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPS1101DR TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.3A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 791mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPS1101DRG4 TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.3A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 791mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPS1101PWRG4 TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.18A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 710mW Surface Mount 16-TSSOP (0.173", 4.40mm Width)
TPS1101DG4 TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 15V 2.3A (Ta) 90 mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25nC @ 10V - 791mW Surface Mount 8-SOIC (0.154", 3.90mm Width)