| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD25211W1015 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 20V | 3.2A (Ta) | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | 1W | Surface Mount | 6-UFBGA, DSBGA |
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