| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD25483F4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 20V | 1.6A (Ta) | 205 mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.959nC @ 4.5V | 198pF @ 10V | 500mW | Surface Mount | 3-XLGA | |
| CSD13201W10 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 12V | 1.6A (Ta) | 34 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 462pF @ 6V | 1.2W | Surface Mount | 4-UFBGA, DSBGA | |
| TPS1100DR | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100DRG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100DG4 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPS1100D | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 791mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
© 2016 Copyright
