Manufacture :NXP SEMICONDUCTORS
300MHz,Frequency - Transition
Through Hole,Mounting Type
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2N3904,116 NXP SEMICONDUCTORS
NPN 200mA 40V 200mV @ 5mA, 50mA - 100 @ 10mA, 1V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PN2222A,116 NXP SEMICONDUCTORS
NPN 600mA 40V 1V @ 50mA, 500mA - 100 @ 150mA, 10V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N3904,412 NXP SEMICONDUCTORS
NPN 200mA 40V 200mV @ 5mA, 50mA - 100 @ 10mA, 1V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
PN2222A,412 NXP SEMICONDUCTORS
NPN 600mA 40V 1V @ 50mA, 500mA - 100 @ 150mA, 10V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
PN2222A,126 NXP SEMICONDUCTORS
NPN 600mA 40V 1V @ 50mA, 500mA - 100 @ 150mA, 10V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5401,116 NXP SEMICONDUCTORS
PNP 300mA 150V 500mV @ 5mA, 50mA - 60 @ 10mA, 5V 630mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5551,116 NXP SEMICONDUCTORS
NPN 300mA 160V 200mV @ 5mA, 50mA - 80 @ 10mA, 5V 630mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N5401,412 NXP SEMICONDUCTORS
PNP 300mA 150V 500mV @ 5mA, 50mA - 60 @ 10mA, 5V 630mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2N5551,412 NXP SEMICONDUCTORS
NPN 300mA 160V 200mV @ 5mA, 50mA - 80 @ 10mA, 5V 630mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)