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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
Manufacture :NXP SEMICONDUCTORS
830mW,Power - Max
32 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BF420,112 NXP SEMICONDUCTORS
NPN 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BF420,116 NXP SEMICONDUCTORS
NPN 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BF421,112 NXP SEMICONDUCTORS
PNP 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BF422,116 NXP SEMICONDUCTORS
NPN 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BF423,112 NXP SEMICONDUCTORS
PNP 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BF423,116 NXP SEMICONDUCTORS
PNP 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS4140S,126 NXP SEMICONDUCTORS
NPN 1A 40V 500mV @ 100mA, 1A 100nA 300 @ 500mA, 5V 830mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS5140S,126 NXP SEMICONDUCTORS
PNP 1A 40V 500mV @ 100mA, 1A 100nA 300 @ 100mA, 5V 830mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS4350S,126 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A - 100 @ 2A, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS5350S,126 NXP SEMICONDUCTORS
PNP 3A 50V 300mV @ 200mA, 2A - 100 @ 2A, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads


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