| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBHV9050Z,115 | NXP SEMICONDUCTORS | PNP | 250mA | 500V | 350mV @ 20mA, 100mA | 100nA | 80 @ 50mA, 10V | 700mW | 50MHz | Surface Mount | TO-261-4, TO-261AA | |
| PBSS8110D,115 | NXP SEMICONDUCTORS | NPN | 1A | 100V | 200mV @ 100mA, 1A | 100nA | 150 @ 250mA, 10V | 700mW | 100MHz | Surface Mount | SC-74, SOT-457 | |
| PBRN113ES,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 800mA | 40V | 1.15V @ 8mA, 800mA | 500nA | 180 @ 300mA, 5V | 700mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRN113ZS,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 800mA | 40V | 1.15V @ 8mA, 800mA | 500nA | 500 @ 300mA, 5V | 700mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRN123ES,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 800mA | 40V | 1.15V @ 8mA, 800mA | 500nA | 280 @ 300mA, 5V | 700mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRN123YS,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 800mA | 40V | 1.15V @ 8mA, 800mA | 500nA | 500 @ 300mA, 5V | 700mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS9110D,115 | NXP SEMICONDUCTORS | PNP | 1A | 100V | 320mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 700mW | 100MHz | Surface Mount | SC-74, SOT-457 |
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