| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N4401,116 | NXP SEMICONDUCTORS | NPN | 600mA | 40V | 750mV @ 50mA, 500mA | - | 100 @ 150mA, 1V | 630mW | 250MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| 2N5401,116 | NXP SEMICONDUCTORS | PNP | 300mA | 150V | 500mV @ 5mA, 50mA | - | 60 @ 10mA, 5V | 630mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| 2N5551,116 | NXP SEMICONDUCTORS | NPN | 300mA | 160V | 200mV @ 5mA, 50mA | - | 80 @ 10mA, 5V | 630mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| 2N5401,412 | NXP SEMICONDUCTORS | PNP | 300mA | 150V | 500mV @ 5mA, 50mA | - | 60 @ 10mA, 5V | 630mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| 2N5551,412 | NXP SEMICONDUCTORS | NPN | 300mA | 160V | 200mV @ 5mA, 50mA | - | 80 @ 10mA, 5V | 630mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |
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