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Manufacture :NXP SEMICONDUCTORS

625mW,Power - Max

30 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

BC517,116 NXP SEMICONDUCTORS

NPN - Darlington 500mA 30V 1V @ 100µA, 100mA - 30000 @ 20mA, 2V 625mW 220MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC517,112 NXP SEMICONDUCTORS

NPN - Darlington 500mA 30V 1V @ 100µA, 100mA - 30000 @ 20mA, 2V 625mW 220MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

MPSA06,412 NXP SEMICONDUCTORS

NPN 500mA 80V 250mV @ 10mA, 100mA - 100 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC337-16,126 NXP SEMICONDUCTORS

NPN 500mA 45V 700mV @ 50mA, 500mA - 100 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-25,126 NXP SEMICONDUCTORS

NPN 500mA 45V 700mV @ 50mA, 500mA - 160 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-25,112 NXP SEMICONDUCTORS

NPN 500mA 45V 700mV @ 50mA, 500mA - 160 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

MPSA06,126 NXP SEMICONDUCTORS

NPN 500mA 80V 250mV @ 10mA, 100mA - 100 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

MPSA06,116 NXP SEMICONDUCTORS

NPN 500mA 80V 250mV @ 10mA, 100mA - 100 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

MPSA56,116 NXP SEMICONDUCTORS

PNP 500mA 80V 250mV @ 10mA, 100mA - 100 @ 100mA, 1V 625mW 50MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

MPSA92,412 NXP SEMICONDUCTORS

PNP 100mA 300V 500mV @ 2mA, 20mA - 25 @ 30mA, 10V 625mW 50MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
BC517,116	NXP SEMICONDUCTORS	NPN - Darlington	500mA	30V	1V @ 100µA, 100mA	-	30000 @ 20mA, 2V	625mW	220MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517,112	NXP SEMICONDUCTORS	NPN - Darlington	500mA	30V	1V @ 100µA, 100mA	-	30000 @ 20mA, 2V	625mW	220MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
MPSA06,412	NXP SEMICONDUCTORS	NPN	500mA	80V	250mV @ 10mA, 100mA	-	100 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC337-16,126	NXP SEMICONDUCTORS	NPN	500mA	45V	700mV @ 50mA, 500mA	-	100 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-25,126	NXP SEMICONDUCTORS	NPN	500mA	45V	700mV @ 50mA, 500mA	-	160 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-25,112	NXP SEMICONDUCTORS	NPN	500mA	45V	700mV @ 50mA, 500mA	-	160 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
MPSA06,126	NXP SEMICONDUCTORS	NPN	500mA	80V	250mV @ 10mA, 100mA	-	100 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPSA06,116	NXP SEMICONDUCTORS	NPN	500mA	80V	250mV @ 10mA, 100mA	-	100 @ 100mA, 1V	625mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPSA56,116	NXP SEMICONDUCTORS	PNP	500mA	80V	250mV @ 10mA, 100mA	-	100 @ 100mA, 1V	625mW	50MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPSA92,412	NXP SEMICONDUCTORS	PNP	100mA	300V	500mV @ 2mA, 20mA	-	25 @ 30mA, 10V	625mW	50MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)

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