Manufacture :NXP SEMICONDUCTORS
70 @ 50mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
14 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTD113ZT,215 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB113ZT,215 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 100nA (ICBO) 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB113ZS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTB123YS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTD113ZS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTD123YS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTD113ZK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTD123YK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB113ZK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB123YK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 70 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3