Manufacture :NXP SEMICONDUCTORS
35 @ 5mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
21 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTC123YU,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 200mW - Surface Mount SC-70, SOT-323
PDTA123YT,215 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA113ZK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA113ZS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA123YK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA123YS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC123YK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTC123YS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA113ZE,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 35 @ 5mA, 5V 150mW - Surface Mount SC-75, SOT-416
PDTA113ZT,215 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 100mA 35 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3