Manufacture :NXP SEMICONDUCTORS
30 @ 5mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
32 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTA114EU,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 200mW 180MHz Surface Mount SC-70, SOT-323
PDTA114EE,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 150mW 180MHz Surface Mount SC-75, SOT-416
PDTC114EU,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 200mW - Surface Mount SC-70, SOT-323
PDTC114EU,135 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 200mW - Surface Mount SC-70, SOT-323
PDTC114EM,315 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 250mW - Surface Mount SC-101, SOT-883
PDTA114EU,135 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 200mW - Surface Mount SC-70, SOT-323
PDTA114ES,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC114ES,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA114EM,315 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 250mW - Surface Mount SC-101, SOT-883
PDTC114EMB,315 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 250mW 230MHz Surface Mount 3-XFDFN