Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
PDTA114TS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 100mA | 50V | 150mV @ 500µA, 10mA | 1µA | 200 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
PDTC114TS,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 100mA | 50V | 150mV @ 500µA, 10mA | 1µA | 200 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
PDTA143TS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 100mA | 50V | 150mV @ 250µA, 5mA | 1µA | 200 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
PDTC143TS,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 100mA | 50V | 100mV @ 250µA, 5mA | 1µA | 200 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |