Manufacture :NXP SEMICONDUCTORS
200 @ 1mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
500mW,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTA114TS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 200 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC114TS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 200 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA143TS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 200 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC143TS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 200 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads