Manufacture :NXP SEMICONDUCTORS
100 @ 5mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
32 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTA114YT,215 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 100nA (ICBO) 100 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA114YU,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 200mW - Surface Mount SC-70, SOT-323
PDTC114YEF,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 250mW - Surface Mount SC-89, SOT-490
PDTA114YK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTC114YK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA114YS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC114YS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC114YE,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 150mW - Surface Mount SC-75, SOT-416
PDTA114YE,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 150mW - Surface Mount SC-75, SOT-416
PDTC114YE,135 NXP SEMICONDUCTORS
NPN - Pre-Biased 100mA 50V 100mV @ 250µA, 5mA 1µA 100 @ 5mA, 5V 150mW - Surface Mount SC-75, SOT-416