Manufacture :NXP SEMICONDUCTORS
100 @ 50mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
8 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PDTD123TT,215 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTA323TK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 15V 80mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB123TK,115 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB123TS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC323TK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 15V 80mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTD123TK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3
PDTD123TS,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTB123TT,215 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 100 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3