Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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Manufacture :NXP SEMICONDUCTORS

PNP - Pre-Biased,Transistor Type

100 @ 1mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce

21 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

PDTA144TT,215 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA124TT,215 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TK,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA124TK,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA144TK,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TS,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA124TS,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA144TS,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 100 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA115TT,215 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TU,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 200mW - Surface Mount SC-70, SOT-323

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
PDTA144TT,215	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA124TT,215	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TK,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA124TK,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA144TK,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TS,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA124TS,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA144TS,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	100 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA115TT,215	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TU,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	200mW	-	Surface Mount	SC-70, SOT-323

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