| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PUMH16,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| PUMH13,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| PUMD48,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| NXP3875GR | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| NXP3875YR | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| PBRP113ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP113ZS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123YS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PHD13005AD,127 | NXP SEMICONDUCTORS | NPN | 4A | 700V | - | - | - | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
© 2016 Copyright
