| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4140S,126 | NXP SEMICONDUCTORS | NPN | 1A | 40V | 500mV @ 100mA, 1A | 100nA | 300 @ 500mA, 5V | 830mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS5140S,126 | NXP SEMICONDUCTORS | PNP | 1A | 40V | 500mV @ 100mA, 1A | 100nA | 300 @ 100mA, 5V | 830mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS8110AS,126 | NXP SEMICONDUCTORS | NPN | 1A | 100V | 200mV @ 100mA, 1A | 100nA | 150 @ 250mA, 10V | 830mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS8110S,126 | NXP SEMICONDUCTORS | NPN | 1A | 100V | 200mV @ 100mA, 1A | 100nA | 150 @ 250mA, 10V | 830mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS9110AS,126 | NXP SEMICONDUCTORS | PNP | 1A | 100V | 320mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 830mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBSS9110S,126 | NXP SEMICONDUCTORS | PNP | 1A | 100V | 320mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 830mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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