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Manufacture :NXP SEMICONDUCTORS

100V,Voltage - Collector Emitter Breakdown (Max)

100nA,Current - Collector Cutoff (Max)

18 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

PBSS8110T,215 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 480mW 100MHz Surface Mount TO-236-3, SC-59, SOT-23-3

PBSS8110X,135 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 2W 100MHz Surface Mount TO-243AA

PBSS8110D,115 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 700mW 100MHz Surface Mount SC-74, SOT-457

PBSS9110X,135 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 2W 100MHz Surface Mount TO-243AA

PBSS9410PA,115 NXP SEMICONDUCTORS

PNP 2.7A 100V 450mV @ 135mA, 2.7A 100nA 170 @ 1A, 2V 2.1W 115MHz Surface Mount 3-UDFN Exposed Pad

PBSS8510PA,115 NXP SEMICONDUCTORS

NPN 5.2A 100V 340mV @ 260mA, 5.2A 100nA 95 @ 2A, 2V 2.1W 150MHz Surface Mount 3-UDFN Exposed Pad

PBSS8110AS,126 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS8110S,126 NXP SEMICONDUCTORS

NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110AS,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110S,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
PBSS8110T,215	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	480mW	100MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3
PBSS8110X,135	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	2W	100MHz	Surface Mount	TO-243AA
PBSS8110D,115	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	700mW	100MHz	Surface Mount	SC-74, SOT-457
PBSS9110X,135	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	2W	100MHz	Surface Mount	TO-243AA
PBSS9410PA,115	NXP SEMICONDUCTORS	PNP	2.7A	100V	450mV @ 135mA, 2.7A	100nA	170 @ 1A, 2V	2.1W	115MHz	Surface Mount	3-UDFN Exposed Pad
PBSS8510PA,115	NXP SEMICONDUCTORS	NPN	5.2A	100V	340mV @ 260mA, 5.2A	100nA	95 @ 2A, 2V	2.1W	150MHz	Surface Mount	3-UDFN Exposed Pad
PBSS8110AS,126	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS8110S,126	NXP SEMICONDUCTORS	NPN	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110AS,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110S,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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