PBRP113ES,126 |
NXP SEMICONDUCTORS |
|
PNP - Pre-Biased
|
800mA
|
50V
|
-
|
-
|
-
|
500mW
|
-
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
PBRP113ZS,126 |
NXP SEMICONDUCTORS |
|
PNP - Pre-Biased
|
800mA
|
50V
|
-
|
-
|
-
|
500mW
|
-
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
PBRP123ES,126 |
NXP SEMICONDUCTORS |
|
PNP - Pre-Biased
|
800mA
|
50V
|
-
|
-
|
-
|
500mW
|
-
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
PBRP123YS,126 |
NXP SEMICONDUCTORS |
|
PNP - Pre-Biased
|
800mA
|
50V
|
-
|
-
|
-
|
500mW
|
-
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
MPS3906,126 |
NXP SEMICONDUCTORS |
|
PNP
|
100mA
|
40V
|
400mV @ 5mA, 50mA
|
-
|
100 @ 10mA, 1V
|
500mW
|
150MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
BC517,116 |
NXP SEMICONDUCTORS |
|
NPN - Darlington
|
500mA
|
30V
|
1V @ 100µA, 100mA
|
-
|
30000 @ 20mA, 2V
|
625mW
|
220MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
BC517,112 |
NXP SEMICONDUCTORS |
|
NPN - Darlington
|
500mA
|
30V
|
1V @ 100µA, 100mA
|
-
|
30000 @ 20mA, 2V
|
625mW
|
220MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA)
|
MPSA06,412 |
NXP SEMICONDUCTORS |
|
NPN
|
500mA
|
80V
|
250mV @ 10mA, 100mA
|
-
|
100 @ 100mA, 1V
|
625mW
|
100MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA)
|
2N3904,116 |
NXP SEMICONDUCTORS |
|
NPN
|
200mA
|
40V
|
200mV @ 5mA, 50mA
|
-
|
100 @ 10mA, 1V
|
500mW
|
300MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|
2N3906,116 |
NXP SEMICONDUCTORS |
|
PNP
|
200mA
|
40V
|
200mV @ 5mA, 50mA
|
-
|
100 @ 10mA, 1V
|
500mW
|
250MHz
|
Through Hole
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|