Manufacture :NXP SEMICONDUCTORS
-,Current - Collector Cutoff (Max)
Through Hole,Mounting Type
112 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBRP113ES,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 800mA 50V - - - 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBRP113ZS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 800mA 50V - - - 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBRP123ES,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 800mA 50V - - - 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBRP123YS,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 800mA 50V - - - 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPS3906,126 NXP SEMICONDUCTORS
PNP 100mA 40V 400mV @ 5mA, 50mA - 100 @ 10mA, 1V 500mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517,116 NXP SEMICONDUCTORS
NPN - Darlington 500mA 30V 1V @ 100µA, 100mA - 30000 @ 20mA, 2V 625mW 220MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC517,112 NXP SEMICONDUCTORS
NPN - Darlington 500mA 30V 1V @ 100µA, 100mA - 30000 @ 20mA, 2V 625mW 220MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
MPSA06,412 NXP SEMICONDUCTORS
NPN 500mA 80V 250mV @ 10mA, 100mA - 100 @ 100mA, 1V 625mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2N3904,116 NXP SEMICONDUCTORS
NPN 200mA 40V 200mV @ 5mA, 50mA - 100 @ 10mA, 1V 500mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N3906,116 NXP SEMICONDUCTORS
PNP 200mA 40V 200mV @ 5mA, 50mA - 100 @ 10mA, 1V 500mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads