Manufacture :NXP SEMICONDUCTORS
300mV @ 10mA, 100mA,Vce Saturation (Max) @ Ib, Ic
8 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2PA1015GR,126 NXP SEMICONDUCTORS
PNP 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PA1015Y,126 NXP SEMICONDUCTORS
PNP 150mA 50V 300mV @ 10mA, 100mA - 120 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815BL,126 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 350 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815GR,412 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2PC1815GR,126 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815GR,116 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 200 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2PC1815Y,412 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 120 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2PC1815Y,126 NXP SEMICONDUCTORS
NPN 150mA 50V 300mV @ 10mA, 100mA - 120 @ 2mA, 6V 500mW 80MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads