Manufacture :NXP SEMICONDUCTORS
290mV @ 200mA, 2A,Vce Saturation (Max) @ Ib, Ic
7 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS4230PANP,115 NXP SEMICONDUCTORS
NPN, PNP 2A 30V 290mV @ 200mA, 2A 100nA (ICBO) 200 @ 1A, 2V 510mW 120MHz Surface Mount 6-UDFN Exposed Pad
PBSS4350Z,135 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A - 100 @ 2A, 2V 2W 100MHz Surface Mount TO-261-4, TO-261AA
PBSS4350D,115 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A - 100 @ 2A, 2V 750mW 100MHz Surface Mount SC-74, SOT-457
PBSS4350D,125 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A - 100 @ 2A, 2V 750mW 100MHz Surface Mount SC-74, SOT-457
PBSS4230PAN,115 NXP SEMICONDUCTORS
- 2A 30V 290mV @ 200mA, 2A 100nA (ICBO) 200 @ 1A, 2V 510mW 120MHz Surface Mount 6-UDFN Exposed Pad
PBSS4350D,135 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A 100nA (ICBO) 100 @ 2A, 2V 750mW 100MHz Surface Mount SC-74, SOT-457
PBSS4350S,126 NXP SEMICONDUCTORS
NPN 3A 50V 290mV @ 200mA, 2A - 100 @ 2A, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads