Manufacture :NXP SEMICONDUCTORS
200mV @ 100mA, 1A,Vce Saturation (Max) @ Ib, Ic
7 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS8110T,215 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 480mW 100MHz Surface Mount TO-236-3, SC-59, SOT-23-3
PBSS8110X,135 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 2W 100MHz Surface Mount TO-243AA
PBSS8110D,115 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 700mW 100MHz Surface Mount SC-74, SOT-457
PBSS8110Z,135 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 1.4W 100MHz Surface Mount TO-261-4, TO-261AA
PBSS8110Y,115 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 625mW 100MHz Surface Mount 6-TSSOP, SC-88, SOT-363
PBSS8110AS,126 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS8110S,126 NXP SEMICONDUCTORS
NPN 1A 100V 200mV @ 100mA, 1A 100nA 150 @ 250mA, 10V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads