| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDTA115ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 20mA | 50V | 150mV @ 250µA, 5mA | 1µA | 80 @ 5mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTA115TS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 100mA | 50V | 150mV @ 250µA, 5mA | 1µA | 100 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTA143TS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 100mA | 50V | 150mV @ 250µA, 5mA | 1µA | 200 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTC115ES,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 20mA | 50V | 150mV @ 250µA, 5mA | 1µA | 80 @ 5mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTC115TS,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 100mA | 50V | 150mV @ 250µA, 5mA | 1µA | 100 @ 1mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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