Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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Manufacture :NXP SEMICONDUCTORS

150mV @ 250µA, 5mA,Vce Saturation (Max) @ Ib, Ic

100 @ 1mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce

14 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

PDTC115TT,215 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TK,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTC115TK,115 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TS,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTC115TS,126 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTC115TE,115 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 150mW - Surface Mount SC-75, SOT-416

PDTA115TT,215 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3

PDTA115TU,115 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 200mW - Surface Mount SC-70, SOT-323

PDTC115TU,115 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 200mW - Surface Mount SC-70, SOT-323

PDTC115TM,315 NXP SEMICONDUCTORS

NPN - Pre-Biased 100mA 50V 150mV @ 250µA, 5mA 1µA 100 @ 1mA, 5V 250mW - Surface Mount SC-101, SOT-883

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
PDTC115TT,215	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TK,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTC115TK,115	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TS,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC115TS,126	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTC115TE,115	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	150mW	-	Surface Mount	SC-75, SOT-416
PDTA115TT,215	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3
PDTA115TU,115	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	200mW	-	Surface Mount	SC-70, SOT-323
PDTC115TU,115	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	200mW	-	Surface Mount	SC-70, SOT-323
PDTC115TM,315	NXP SEMICONDUCTORS	NPN - Pre-Biased	100mA	50V	150mV @ 250µA, 5mA	1µA	100 @ 1mA, 5V	250mW	-	Surface Mount	SC-101, SOT-883

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