| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBRP113ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP113ZS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123YS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BF199,112 | NXP SEMICONDUCTORS | NPN | 25mA | 25V | - | - | 38 @ 7mA, 10V | 500mW | 550MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| BF370,112 | NXP SEMICONDUCTORS | NPN | 100mA | 15V | - | - | 40 @ 10mA, 1V | 500mW | 500MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |
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