| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PUMH16,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| PUMH13,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| PUMD48,115 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | |
| BF824W,135 | NXP SEMICONDUCTORS | PNP | 25mA | 30V | - | - | 25 @ 4mA, 10V | 200mW | 400MHz | Surface Mount | SC-70, SOT-323 | |
| BF824,235 | NXP SEMICONDUCTORS | PNP | 25mA | 30V | - | - | 25 @ 4mA, 10V | 250mW | 450MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PBRP113ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP113ZS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PBRP123YS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 800mA | 50V | - | - | - | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BFS19,235 | NXP SEMICONDUCTORS | NPN | 30mA | 20V | - | - | 65 @ 1mA, 10V | 250mW | 260MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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