Manufacture :NXP SEMICONDUCTORS
60V,Voltage - Collector Emitter Breakdown (Max)
830mW,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BC638,126 NXP SEMICONDUCTORS
PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,116 NXP SEMICONDUCTORS
PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,112 NXP SEMICONDUCTORS
PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)