| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDTD113ZT,215 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 250mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PDTA323TK,115 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 15V | 80mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | 250mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PDTB113ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 33 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTB113ZS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTB123ES,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 40 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTB123TK,115 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | 250mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PDTB123TS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTB123YS,126 | NXP SEMICONDUCTORS | PNP - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| PDTC323TK,115 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 500mA | 15V | 80mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | 250mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PDTD113ES,126 | NXP SEMICONDUCTORS | NPN - Pre-Biased | 500mA | 50V | 300mV @ 2.5mA, 50mA | 500nA | 33 @ 50mA, 5V | 500mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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