| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUJ100LR,412 | NXP SEMICONDUCTORS | NPN | 1A | 400V | 1.5V @ 250mA, 750mA | 1mA | 10 @ 400mA, 5V | 2.1W | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| PHD13003C,412 | NXP SEMICONDUCTORS | NPN | 1.5A | 400V | 1.5V @ 500mA, 1.5A | 100µA | 5 @ 1A, 2V | 2.1W | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| BUJ100,412 | NXP SEMICONDUCTORS | NPN | 1A | 400V | 1V @ 150mA, 750mA | 100µA | 9 @ 750mA, 5V | 2W | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| PHE13003A,412 | NXP SEMICONDUCTORS | NPN | 1A | 400V | 1.5V @ 250mA, 750mA | 1mA | 10 @ 400mA, 5V | 2.1W | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| BC517,112 | NXP SEMICONDUCTORS | NPN - Darlington | 500mA | 30V | 1V @ 100µA, 100mA | - | 30000 @ 20mA, 2V | 625mW | 220MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| MPSA06,412 | NXP SEMICONDUCTORS | NPN | 500mA | 80V | 250mV @ 10mA, 100mA | - | 100 @ 100mA, 1V | 625mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| 2N3904,412 | NXP SEMICONDUCTORS | NPN | 200mA | 40V | 200mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 500mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| BC337-25,112 | NXP SEMICONDUCTORS | NPN | 500mA | 45V | 700mV @ 50mA, 500mA | - | 160 @ 100mA, 1V | 625mW | 100MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| PN2222A,412 | NXP SEMICONDUCTORS | NPN | 600mA | 40V | 1V @ 50mA, 500mA | - | 100 @ 150mA, 10V | 500mW | 300MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| BF199,112 | NXP SEMICONDUCTORS | NPN | 25mA | 25V | - | - | 38 @ 7mA, 10V | 500mW | 550MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |
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