Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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Manufacture :NXP SEMICONDUCTORS

PNP,Transistor Type

100MHz,Frequency - Transition

Through Hole,Mounting Type

17 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

PBSS5350S,126 NXP SEMICONDUCTORS

PNP 3A 50V 300mV @ 200mA, 2A - 100 @ 2A, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110AS,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110S,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC557C,112 NXP SEMICONDUCTORS

PNP 100mA 45V 650mV @ 5mA, 100mA - 420 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC556B,112 NXP SEMICONDUCTORS

PNP 100mA 65V 650mV @ 5mA, 100mA - 220 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC557B,112 NXP SEMICONDUCTORS

PNP 100mA 45V 650mV @ 5mA, 100mA - 220 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC556A,112 NXP SEMICONDUCTORS

PNP 100mA 65V 650mV @ 5mA, 100mA - 125 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC556B,116 NXP SEMICONDUCTORS

PNP 100mA 65V 650mV @ 5mA, 100mA - 220 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC557,116 NXP SEMICONDUCTORS

PNP 100mA 45V 650mV @ 5mA, 100mA - 125 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC557B,126 NXP SEMICONDUCTORS

PNP 100mA 45V 650mV @ 5mA, 100mA - 220 @ 2mA, 5V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
PBSS5350S,126	NXP SEMICONDUCTORS	PNP	3A	50V	300mV @ 200mA, 2A	-	100 @ 2A, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110AS,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110S,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC557C,112	NXP SEMICONDUCTORS	PNP	100mA	45V	650mV @ 5mA, 100mA	-	420 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC556B,112	NXP SEMICONDUCTORS	PNP	100mA	65V	650mV @ 5mA, 100mA	-	220 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC557B,112	NXP SEMICONDUCTORS	PNP	100mA	45V	650mV @ 5mA, 100mA	-	220 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC556A,112	NXP SEMICONDUCTORS	PNP	100mA	65V	650mV @ 5mA, 100mA	-	125 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC556B,116	NXP SEMICONDUCTORS	PNP	100mA	65V	650mV @ 5mA, 100mA	-	220 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC557,116	NXP SEMICONDUCTORS	PNP	100mA	45V	650mV @ 5mA, 100mA	-	125 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC557B,126	NXP SEMICONDUCTORS	PNP	100mA	45V	650mV @ 5mA, 100mA	-	220 @ 2mA, 5V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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