Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

My Account

Manufacture :NXP SEMICONDUCTORS

PNP,Transistor Type

830mW,Power - Max

15 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

BF421,112 NXP SEMICONDUCTORS

PNP 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BF423,112 NXP SEMICONDUCTORS

PNP 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BF423,116 NXP SEMICONDUCTORS

PNP 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS5140S,126 NXP SEMICONDUCTORS

PNP 1A 40V 500mV @ 100mA, 1A 100nA 300 @ 100mA, 5V 830mW 150MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS5350S,126 NXP SEMICONDUCTORS

PNP 3A 50V 300mV @ 200mA, 2A - 100 @ 2A, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110AS,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PBSS9110S,126 NXP SEMICONDUCTORS

PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC636,116 NXP SEMICONDUCTORS

PNP 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 145MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC638,126 NXP SEMICONDUCTORS

PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC638,116 NXP SEMICONDUCTORS

PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Previous
1
2
Next

Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
BF421,112	NXP SEMICONDUCTORS	PNP	50mA	300V	600mV @ 5mA, 30mA	-	50 @ 25mA, 20V	830mW	60MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BF423,112	NXP SEMICONDUCTORS	PNP	50mA	250V	600mV @ 5mA, 30mA	-	50 @ 25mA, 20V	830mW	60MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BF423,116	NXP SEMICONDUCTORS	PNP	50mA	250V	600mV @ 5mA, 30mA	-	50 @ 25mA, 20V	830mW	60MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS5140S,126	NXP SEMICONDUCTORS	PNP	1A	40V	500mV @ 100mA, 1A	100nA	300 @ 100mA, 5V	830mW	150MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS5350S,126	NXP SEMICONDUCTORS	PNP	3A	50V	300mV @ 200mA, 2A	-	100 @ 2A, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110AS,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110S,126	NXP SEMICONDUCTORS	PNP	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC636,116	NXP SEMICONDUCTORS	PNP	1A	45V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	145MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,126	NXP SEMICONDUCTORS	PNP	1A	60V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,116	NXP SEMICONDUCTORS	PNP	1A	60V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

sales@componentbuy.com

Find Fast Easier

Category

Manufacturer

Quick Quote

BOM Upload

Sample Buy

Tags

About Us

Contact Us

FAQs

Privacy Policy

Terms and Condition

NewsLetter

Join Us

Email Invalid Email address

© 2016 Copyright