Manufacture :NXP SEMICONDUCTORS
349W,Power - Max
TO-220-3,Package / Case
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK952R8-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 349W Through Hole TO-220-3
BUK751R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-220-3
BUK752R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 158nC @ 10V 11180pF @ 25V 349W Through Hole TO-220-3
BUK751R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-220-3
BUK753R8-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-220-3
BUK951R9-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 349W Through Hole TO-220-3
BUK951R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.4 mOhm @ 25A, 10V 2.1V @ 1mA 113nC @ 5V 16150pF @ 25V 349W Through Hole TO-220-3
BUK954R4-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 2.1V @ 1mA 123nC @ 5V 17130pF @ 25V 349W Through Hole TO-220-3
BUK956R1-100E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Ta) 5.9 mOhm @ 25A, 10V 2.1V @ 1mA 133nC @ 5V 17460pF @ 25V 349W Through Hole TO-220-3
BUK755R4-100E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Ta) 5.2 mOhm @ 25A, 10V 4V @ 1mA 180nC @ 10V 11810pF @ 25V 349W Through Hole TO-220-3