Manufacture :NXP SEMICONDUCTORS
91nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7606-75B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A (Tc) 5.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 7446pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E2R7-30B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 2.7 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 6212pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK762R6-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 7130pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK762R7-30B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.7 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 6212pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7506-75B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 5.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 7446pF @ 25V 300W Through Hole TO-220-3
BUK752R7-30B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 2.7 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 6212pF @ 25V 300W Through Hole TO-220-3
PHB160NQ08T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A (Tc) 5.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 5585pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP160NQ08T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A (Tc) 5.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 5585pF @ 25V 300W Through Hole TO-220-3