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Manufacture :NXP SEMICONDUCTORS

82nC @ 10V,Gate Charge (Qg) @ Vgs

9 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK6507-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 7 mOhm @ 25A, 10V 2.8V @ 1mA 82nC @ 10V 5160pF @ 25V 158W Through Hole TO-220-3

PSMN9R5-100PS,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 100V 89A 9.6 mOhm @ 15A, 10V 4V @ 1mA 82nC @ 10V 4454pF @ 50V 211W Through Hole TO-220-3

BUK6207-55C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 90A 7.8 mOhm @ 25A, 10V 2.8V @ 1mA 82nC @ 10V 5160pF @ 25V 158W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

BUK6607-55C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 6.5 mOhm @ 25A, 10V 2.8V @ 1mA 82nC @ 10V 5160pF @ 25V 158W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK764R4-60E,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.5 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK7E4R6-60E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

PSMN9R5-100BS,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 100V 89A (Tmb) 9.6 mOhm @ 15A, 10V 4V @ 1mA 82nC @ 10V 4454pF @ 50V 211W - -

BUK754R7-60E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-220-3

BUK7L06-34ARC,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 34V 75A (Tc) 6 mOhm @ 30A, 10V 3.8V @ 1mA 82nC @ 10V 4533pF @ 25V 250W Through Hole TO-220-3

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK6507-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	7 mOhm @ 25A, 10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	158W	Through Hole	TO-220-3
PSMN9R5-100PS,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	100V	89A	9.6 mOhm @ 15A, 10V	4V @ 1mA	82nC @ 10V	4454pF @ 50V	211W	Through Hole	TO-220-3
BUK6207-55C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	90A	7.8 mOhm @ 25A, 10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	158W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6607-55C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	6.5 mOhm @ 25A, 10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	158W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK764R4-60E,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	60V	100A (Ta)	4.5 mOhm @ 25A, 10V	4V @ 1mA	82nC @ 10V	6230pF @ 25V	234W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E4R6-60E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	60V	100A (Ta)	4.6 mOhm @ 25A, 10V	4V @ 1mA	82nC @ 10V	6230pF @ 25V	234W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN9R5-100BS,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	100V	89A (Tmb)	9.6 mOhm @ 15A, 10V	4V @ 1mA	82nC @ 10V	4454pF @ 50V	211W	-	-
BUK754R7-60E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	60V	100A (Ta)	4.6 mOhm @ 25A, 10V	4V @ 1mA	82nC @ 10V	6230pF @ 25V	234W	Through Hole	TO-220-3
BUK7L06-34ARC,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	34V	75A (Tc)	6 mOhm @ 30A, 10V	3.8V @ 1mA	82nC @ 10V	4533pF @ 25V	250W	Through Hole	TO-220-3

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