Manufacture :NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide,FET Type
79nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN035-150P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 150V 50A 35 mOhm @ 25A, 10V 4V @ 1mA 79nC @ 10V 4720pF @ 25V 250W Through Hole TO-220-3
BUK762R9-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Ta) 2.9 mOhm @ 25A, 10V 4V @ 1mA 79nC @ 10V 6200pF @ 25V 234W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN035-150B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 150V 50A (Tc) 35 mOhm @ 25A, 10V 4V @ 1mA 79nC @ 10V 4720pF @ 25V 250W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK753R1-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Ta) 3.1 mOhm @ 25A, 10V 4V @ 1mA 79nC @ 10V 6200pF @ 25V 234W Through Hole TO-220-3
BUK7E3R1-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Ta) 3.1 mOhm @ 25A, 10V 4V @ 1mA 79nC @ 10V 6200pF @ 25V 234W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA