Manufacture :NXP SEMICONDUCTORS
66nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN1R2-25YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 25V 100A (Tmb) 1.3 mOhm @ 25A, 10V 1.95V @ 1mA 66nC @ 10V 4173pF @ 12V 179W Surface Mount SC-100, SOT-669, 4-LFPAK
PHB47NQ10T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 47A (Tc) 28 mOhm @ 25A, 10V 4V @ 1mA 66nC @ 10V 3100pF @ 25V 166W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R7-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 2.7 mOhm @ 15A, 10V 2.15V @ 1mA 66nC @ 10V 3954pF @ 12V 170W Through Hole TO-220-3
PSMN2R7-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3 mOhm @ 25A, 10V 2.15V @ 1mA 66nC @ 10V 3954pF @ 15V 170W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP47NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 47A (Tc) 28 mOhm @ 25A, 10V 4V @ 1mA 66nC @ 10V 3100pF @ 25V 166W Through Hole TO-220-3