Manufacture :NXP SEMICONDUCTORS
63nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK6210-55C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 78A 9.6 mOhm @ 15A, 10V 2.8V @ 1mA 63nC @ 10V 4000pF @ 25V 128W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN2R6-40YS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 2.8 mOhm @ 25A, 10V 4V @ 1mA 63nC @ 10V 3776pF @ 12V 131W Surface Mount SC-100, SOT-669, 4-LFPAK
IRF640,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 16A (Tc) 180 mOhm @ 8A, 10V 4V @ 1mA 63nC @ 10V 1850pF @ 25V 136W Through Hole TO-220-3