Manufacture :NXP SEMICONDUCTORS
26nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN017-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 50A 17 mOhm @ 10A, 10V 4V @ 1mA 26nC @ 10V 1573pF @ 40V 103W Through Hole TO-220-3
PMPB48EP,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 30V 4.7A (Ta) 50 mOhm @ 4.7A, 10V 2.5V @ 250µA 26nC @ 10V 860pF @ 15V 1.7W Surface Mount 6-UDFN Exposed Pad
PSMN017-80BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 50A (Tmb) 17 mOhm @ 10A, 10V 4V @ 1mA 26nC @ 10V 1573pF @ 40V 103W - -
PSMN018-80YS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 45A (Tc) 18 mOhm @ 5A, 10V 4V @ 1mA 26nC @ 10V 1640pF @ 40V 89W Surface Mount SC-100, SOT-669, 4-LFPAK
PHK4NQ20T,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 4A (Ta) 130 mOhm @ 4A, 10V 4V @ 1mA 26nC @ 10V 1230pF @ 25V 6.25W Surface Mount 8-SOIC (0.154", 3.90mm Width)
PHM12NQ20T,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 14.4A (Tc) 130 mOhm @ 12A, 10V 4V @ 1mA 26nC @ 10V 1230pF @ 25V 62.5W Surface Mount 8-VDFN Exposed Pad