Manufacture :NXP SEMICONDUCTORS
229nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK661R6-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 1.6 mOhm @ 25A, 10V 2.8V @ 1mA 229nC @ 10V 14964pF @ 25V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK652R0-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 2.2 mOhm @ 25A, 10V 2.8V @ 1mA 229nC @ 10V 14964pF @ 25V 306W Through Hole TO-220-3
BUK6E2R0-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 2.2 mOhm @ 25A, 10V 2.8V @ 1mA 229nC @ 10V 14964pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA