Manufacture :NXP SEMICONDUCTORS
21nC @ 10V,Gate Charge (Qg) @ Vgs
Through Hole,Mounting Type
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHP18NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 18A 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PSMN8R0-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tc) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W Through Hole TO-220-3
PHP18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 18A 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PHX18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 12.5A (Ta) 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 635pF @ 25V 31.2W Through Hole TO-220-3 Isolated Tab