Manufacture :NXP SEMICONDUCTORS
21nC @ 10V,Gate Charge (Qg) @ Vgs
21nC @ 10V,Gate Charge (Qg) @ Vgs
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHP18NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 18A 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PSMN8R0-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tc) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W Through Hole TO-220-3
PSMN8R0-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tmb) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W - -
PHP18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 18A 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PHB18NQ10T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 18A (Tc) 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN023-80LS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 34A (Tc) 23 mOhm @ 10A, 10V 4V @ 1mA 21nC @ 10V 1295pF @ 40V 65W Surface Mount 8-VDFN Exposed Pad
PHX18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 12.5A (Ta) 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 635pF @ 25V 31.2W Through Hole TO-220-3 Isolated Tab
PHD18NQ10T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 18A (Tc) 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PHT6NQ10T,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 3A 90 mOhm @ 3A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 8.3W Surface Mount TO-261-4, TO-261AA
PHKD3NQ10T,518 NXP SEMICONDUCTORS
2 N-Channel (Dual) 100V 3A 90 mOhm @ 1.5A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 20V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)