Manufacture :NXP SEMICONDUCTORS
3A,Current - Continuous Drain (Id) @ 25°C
21nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHT6NQ10T,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 3A 90 mOhm @ 3A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 8.3W Surface Mount TO-261-4, TO-261AA
PHKD3NQ10T,518 NXP SEMICONDUCTORS
2 N-Channel (Dual) 100V 3A 90 mOhm @ 1.5A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 20V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)