| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSH103,215 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 850mA (Ta) | 400 mOhm @ 500mA, 4.5V | 400mV @ 1mA (Min) | 2.1nC @ 4.5V | 83pF @ 24V | 540mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| BSH103,235 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 850mA (Ta) | 400 mOhm @ 500mA, 4.5V | 400mV @ 1mA (Min) | 2.1nC @ 4.5V | 83pF @ 24V | 540mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| PMDXB950UPE | NXP SEMICONDUCTORS | 2 P-Channel (Dual) | 20V | 500mA (Ta) | 1.4 Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | 43pF @ 10V | 265mW | Surface Mount | 6-XFDFN Exposed Pad |
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