Manufacture :NXP SEMICONDUCTORS
170nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN1R8-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 12V 270W Through Hole TO-220-3
PSMN5R0-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Tmb) 5 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 338W Through Hole TO-220-3
PSMN5R0-100ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Tmb) 5 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN4R3-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Tmb) 4.3 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 338W Through Hole TO-220-3
PSMN4R3-100ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Tmb) 4.3 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN1R8-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 15V 270W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN003-30B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN003-30P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Through Hole TO-220-3
PSMN3R8-100BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Tmb) 3.9 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB