Manufacture :NXP SEMICONDUCTORS
139nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN2R8-80BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R5-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9800pF @ 30V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN3R3-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-220-3
PSMN3R5-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-220-3
PSMN3R3-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA