Manufacture :NXP SEMICONDUCTORS
136nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN1R1-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Tmb) 1.3 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R5-40ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Tmb) 1.6 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK764R2-80E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 10426pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R5-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Tmb) 1.6 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 338W Through Hole TO-220-3